MCQs on Tunnel Diode for NEET 2020

NEET  Physics is the scoring paper in the medical entrance examination. Here, you will discover the NEET Physics MCQ Questions for all Concepts as per the latest syllabus. Practice more on a regular basis with these NEET Physics objective questions on air pollution and improve your subject knowledge & problem-solving skills along with time management. NEET Physics Tunnel Diode Multiple Choice Questions make you feel confident in answering the question in the exam & increases your scores to high.

MCQs on Tunnel Diode

1. The tunnel diode is mainly used
(a) For very high speed of switching
(b) To control the power
(c) For rectification
(d) For fact chopping

Answer

Answer: (a) For very high speed of switching


2. The Tunnel diode is best suited for
(a) Amplitude limiters
(b) Amplifiers
(c) Oscillators
(d) Rectifiers

Answer

Answer: (b) Amplifiers


3. The tunnelling phenomenon is also known as
(a) Bulk semiconductor phenomenon
(b) Auto electronic phenomenon
(c) Auto electric phenomenon
(d) Esaki phenomena

Answer

Answer: (b) Auto electronic phenomenon


4. Tunnel diode operates very fast in the ………. region.
(a) Gamma frequency region
(b) Microwave frequency region
(c) Radiofrequency region
(d) Ultraviolet frequency region

Answer

Answer: (b) Microwave frequency region


5. From the following statements pick the correct statement about tunnel diode
Statement 1: It uses the property of negative conductance
Statement 2: In forward bias the fermilevel of p side becomes higher than the n side It operates at high frequency
(a) 1 only
(b) 1 and 3
(c) 3 only
(d) 2 and 3

Answer

Answer: (b) 1 and 3


6. Which among the following is the reason for the depletion layer of the tunnel diode to be very small?
(a) Dopants are high and it is abrupt
(b) It’s used at very high-frequency ranges
(c) Uses positive conductance property
(d) Tunneling effect

Answer

Answer: (a) Dopants are high and it is abrupt


7. The tunnelling involves
(a) Acceleration of electron in p side
(b) Movement of electrons from the n-side of the conduction band to the p-side of the valance band
(c) Charge distribution management in both the bands
(d) Positive slope characteristic of the diode

Answer

Answer: (b) Movement of electrons from the n-side of the conduction band to the p-side of the valance band


8. What are the materials used to make the Tunnel diode?
(a) AlGaAs
(b) AlGaInP
(c) ZnTe
(d) Silicon and germanium materials

Answer

Answer: (d) Silicon and germanium materials


9. In the construction of tunnel diode, why is the pellet soldered to anode contact and a tiny dot to the cathode contact via a mesh screen?
(a) For better conduction and reduce inductance respectively
(b) For better conduction and reduce inductance respectively
(c) For heat dissipation and increase conduction respectively
(d) For heat dissipation and reduce induction respectively

Answer

Answer: (d) For heat dissipation and reduce induction respectively


10. For a tunnel diode, when p is the probability that the carrier crosses the barrier ‘W’ is the width ‘e’ is energy
(a) p ∝ 1/e(-A*e*w)
(b) p ∝ e(-A*e*w)
(c) p ∝ 1/e(A*e*w)
(d) p ∝ e(A*e*w)

Answer

Answer: (b) p ∝ e(-A*e*w)


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